Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC

Wide-gap semiconducting graphene from nitrogen-seeded SiC.

All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it...

Hydrogen intercalation of graphene grown on 6H-SiC(0001)

Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the...

Stacking of adjacent graphene layers grown on C-face SiC

Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces

Polycrystalline graphene ribbons as chemiresistors.

A IO N Graphene is a two-dimensional semimetal with zero band gap that exhibits excellent electrical, mechanical and thermal properties.[1,2] Transport through delocalized pi bonds allows charge carriers in graphene to achieve high mobility[3,4] for both electrons and holes, over ∼105 cm2/V·s for freely suspended graphene and >104 cm2/V·s for graphene on SiO2. Recent studies have suggested that...